ds30251 rev. 4 - 2 1 of 3 bc856aw - bc858cw www.diodes.com diodes incorporated bc856aw - bc858cw pnp surface mount small signal transistor notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. current gain subgroup c is not available for bc856w. characteristic symbol value unit collector-base voltage bc856 bc857 bc858 v cbo -80 -50 -30 v collector-emitter voltage bc856 bc857 bc858 v ceo -65 -45 -30 v emitter-base voltage v ebo -5.0 v collector current i c -100 ma peak collector current i cm -200 ma peak emitter current i em -200 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage temperature range t j ,t stg -65 to +150 c marking code (note 2) type marking type marking bc856aw k3a bc857cw k3g bc856bw k3b BC858AW k3j, k3a, k3v bc857aw k3v, k3a bc858bw k3k, k3b, k3w bc857bw k3w, k3b bc858cw k3l, k3g maximum ratings @ t a = 25c unless otherwise specified features ideally suited for automatic insertion complementary npn types available (bc846w-bc848w) for switching and af amplifier applications also available in lead free version case: sot-323, molded plastic case material - ul flammability rating classification 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 pin connections: see diagram marking code: see table below & diagram on page 2 ordering & date code information: see page 2 approx. weight: 0.006 grams mechanical data a m j l f d b c h k g b e c sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm
ds30251 rev. 4 - 2 2 of 3 bc856aw - bc858cw www.diodes.com electrical characteristics characteristic symbol min typ max unit test condition collector-base breakdown voltage (note 3) bc856 bc857 bc858 v (br)cbo -80 -50 -30 v i c = 10 a, i b = 0 collector-emitter breakdown voltage (note 3) bc856 bc857 bc858 v (br)ceo -65 -45 -30 v i c = 10ma, i b = 0 emitter-base breakdown voltage (note 3) v (br)ebo -5 v i e = 1 a, i c = 0 dc current gain (note 3) current gain group a b c h fe 125 220 420 180 290 520 250 475 800 v ce = -5.0v, i c = -2.0ma collector-emitter saturation voltage (note 3) v ce(sat) -75 -250 -300 -650 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter saturation voltage (note 3) v be(sat) -700 -850 -950 mv i c = -10ma, i b = -0.5ma i c = -100ma, i b = -5.0ma base-emitter voltage (note 3) v be(on) -600 -650 -750 -820 mv v ce = -5.0v, i c = -2.0ma v ce = -5.0v, i c = -10ma collector-cutoff current (note 3) i cbo i cbo -15 -4.0 na a v cb = -30v v cb = -30v, t a = 150c gain bandwidth product f t 100 200 mhz v ce = -5.0v, i c = -10ma, f = 100mhz collector-base capacitance c cbo 3 4.5 pf v cb = -10v, f = 1.0mhz noise figure nf 10 db v ce = -5.0v, i c = 200a, r s = 2k f = 1khz,
f = 200hz notes: 3. short duration pulse test to minimize self-heating effect. @ t a =25c unless otherwise specified xxx = product type marking code (see page 1), e.g. k3a = bc856aw ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september xxx ym marking information notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = device type, e.g. bc856aw-7. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: bc856aw-7-f. device packaging shipping bc85xxw-7* sot-323 3000/tape & reel ordering information (note 4) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30251 rev. 4 - 2 3 of 3 bc856aw - bc858cw www.diodes.com 1 0.1 10 100 1000 v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2 collector emitter saturation voltage vs. collector current t = 25c a t=-50c a t = 150c a 0 0.1 0.2 0.3 0.4 0 .5 i c i b =10 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 2 5 0 0 10 100 1000 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fi g . 4, gain bandwidth product vs collector current v= 5v ce 1 10 100 1000 1 10 100 1000 v = 5v ce h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3, dc current gain ( group b ) vs. collector current t = 25c a t = -50c a t = 150c a
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